Home > Research > Publications & Outputs > Localized interlayer complexes in heterobilayer...

Associated organisational unit

Electronic data

  • 1802.06005

    Accepted author manuscript, 2.1 MB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License


Text available via DOI:

View graph of relations

Localized interlayer complexes in heterobilayer transition metal dichalcogenides

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number195452
<mark>Journal publication date</mark>31/05/2018
<mark>Journal</mark>Physical review B
Number of pages18
Publication StatusPublished
<mark>Original language</mark>English


We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.