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Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. / Carrington, Peter J.; Young, Robert J.; Hodgson, Peter D. et al.
In: Crystal Growth and Design, Vol. 13, No. 3, 03.2013, p. 1226-1230.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Carrington, PJ, Young, RJ, Hodgson, PD, Sanchez, AM, Hayne, M & Krier, A 2013, 'Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings', Crystal Growth and Design, vol. 13, no. 3, pp. 1226-1230. https://doi.org/10.1021/cg301674k

APA

Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M., & Krier, A. (2013). Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. Crystal Growth and Design, 13(3), 1226-1230. https://doi.org/10.1021/cg301674k

Vancouver

Carrington PJ, Young RJ, Hodgson PD, Sanchez AM, Hayne M, Krier A. Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. Crystal Growth and Design. 2013 Mar;13(3):1226-1230. doi: 10.1021/cg301674k

Author

Carrington, Peter J. ; Young, Robert J. ; Hodgson, Peter D. et al. / Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings. In: Crystal Growth and Design. 2013 ; Vol. 13, No. 3. pp. 1226-1230.

Bibtex

@article{fa6d8211a6cc4f899c681b630b9d051a,
title = "Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings",
abstract = "We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.",
keywords = "DOTS, MOLECULAR-BEAM EPITAXY, SEGREGATION",
author = "Carrington, {Peter J.} and Young, {Robert J.} and Hodgson, {Peter D.} and Sanchez, {Ana M.} and Manus Hayne and Anthony Krier",
year = "2013",
month = mar,
doi = "10.1021/cg301674k",
language = "English",
volume = "13",
pages = "1226--1230",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

AU - Carrington, Peter J.

AU - Young, Robert J.

AU - Hodgson, Peter D.

AU - Sanchez, Ana M.

AU - Hayne, Manus

AU - Krier, Anthony

PY - 2013/3

Y1 - 2013/3

N2 - We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.

AB - We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.

KW - DOTS

KW - MOLECULAR-BEAM EPITAXY

KW - SEGREGATION

U2 - 10.1021/cg301674k

DO - 10.1021/cg301674k

M3 - Journal article

VL - 13

SP - 1226

EP - 1230

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 3

ER -