Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings
AU - Carrington, Peter J.
AU - Young, Robert J.
AU - Hodgson, Peter D.
AU - Sanchez, Ana M.
AU - Hayne, Manus
AU - Krier, Anthony
PY - 2013/3
Y1 - 2013/3
N2 - We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.
AB - We report the successful molecular-beam epitaxial growth of 10 stacked layers of GaSb/GaAs quantum rings using a new procedure. Exact control of the arsenic flux during capping helps to reduce the strong group-V As-Sb exchange reactions, enabling the rings to be capped at the same growth temperature (480 degrees C) without dissolution. X-ray diffraction and transmission electron microscopy indicate excellent structural quality and uniformity with no threading dislocations. This is due to the reduction in the average strain through the quantum-ring formation. The total ring density in the stacks is 1 x 10(11) cm(-2). An unusually long-wavelength quantum-ring photoluminescence peak of 1.3 mu m is observed at low temperature, which is attributed to a reduction in the quantum-ring charging due to lower unintentional p-doping in the GaAs cap layer. The impact that this effect will have on future device designs in solar cells and lasers is also discussed.
KW - DOTS
KW - MOLECULAR-BEAM EPITAXY
KW - SEGREGATION
U2 - 10.1021/cg301674k
DO - 10.1021/cg301674k
M3 - Journal article
VL - 13
SP - 1226
EP - 1230
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 3
ER -