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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

Research output: Contribution to journalJournal article

Published

  • Y. Kim
  • J. M. Poumirol
  • A. Lombardo
  • N. G. Kalugin
  • T. Georgiou
  • Y. J. Kim
  • K. S. Novoselov
  • A. C. Ferrari
  • J. Kono
  • O. Kashuba
  • Vladimir Falko
  • D. Smirnov
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Journal publication date29/05/2013
JournalPhysical review letters
Journal number22
Volume110
Number of pages5
Original languageEnglish

Abstract

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.