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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy. / Kim, Y.; Poumirol, J. M.; Lombardo, A. et al.
In: Physical review letters, Vol. 110, No. 22, 227402, 29.05.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kim, Y, Poumirol, JM, Lombardo, A, Kalugin, NG, Georgiou, T, Kim, YJ, Novoselov, KS, Ferrari, AC, Kono, J, Kashuba, O, Falko, V & Smirnov, D 2013, 'Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy', Physical review letters, vol. 110, no. 22, 227402. https://doi.org/10.1103/PhysRevLett.110.227402

APA

Kim, Y., Poumirol, J. M., Lombardo, A., Kalugin, N. G., Georgiou, T., Kim, Y. J., Novoselov, K. S., Ferrari, A. C., Kono, J., Kashuba, O., Falko, V., & Smirnov, D. (2013). Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy. Physical review letters, 110(22), Article 227402. https://doi.org/10.1103/PhysRevLett.110.227402

Vancouver

Kim Y, Poumirol JM, Lombardo A, Kalugin NG, Georgiou T, Kim YJ et al. Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy. Physical review letters. 2013 May 29;110(22):227402. doi: 10.1103/PhysRevLett.110.227402

Author

Kim, Y. ; Poumirol, J. M. ; Lombardo, A. et al. / Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy. In: Physical review letters. 2013 ; Vol. 110, No. 22.

Bibtex

@article{d79846bc635a41d78149a54560d0836d,
title = "Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy",
abstract = "We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.",
keywords = "PSEUDO-MAGNETIC FIELDS, FILMS",
author = "Y. Kim and Poumirol, {J. M.} and A. Lombardo and Kalugin, {N. G.} and T. Georgiou and Kim, {Y. J.} and Novoselov, {K. S.} and Ferrari, {A. C.} and J. Kono and O. Kashuba and Vladimir Falko and D. Smirnov",
year = "2013",
month = may,
day = "29",
doi = "10.1103/PhysRevLett.110.227402",
language = "English",
volume = "110",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "22",

}

RIS

TY - JOUR

T1 - Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

AU - Kim, Y.

AU - Poumirol, J. M.

AU - Lombardo, A.

AU - Kalugin, N. G.

AU - Georgiou, T.

AU - Kim, Y. J.

AU - Novoselov, K. S.

AU - Ferrari, A. C.

AU - Kono, J.

AU - Kashuba, O.

AU - Falko, Vladimir

AU - Smirnov, D.

PY - 2013/5/29

Y1 - 2013/5/29

N2 - We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.

AB - We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.

KW - PSEUDO-MAGNETIC FIELDS

KW - FILMS

U2 - 10.1103/PhysRevLett.110.227402

DO - 10.1103/PhysRevLett.110.227402

M3 - Journal article

VL - 110

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 22

M1 - 227402

ER -