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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

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  • Y. Kim
  • J. M. Poumirol
  • A. Lombardo
  • N. G. Kalugin
  • T. Georgiou
  • Y. J. Kim
  • K. S. Novoselov
  • A. C. Ferrari
  • J. Kono
  • O. Kashuba
  • Vladimir Falko
  • D. Smirnov
Article number227402
<mark>Journal publication date</mark>29/05/2013
<mark>Journal</mark>Physical review letters
Issue number22
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English


We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.