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Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

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@article{07cd99be3f41445aaa04e037b7c9bea6,
title = "Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon",
abstract = "Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.",
keywords = "mid-infrared, molecular beam epitaxy, photodetector, silicon photonics, type-II superlattice",
author = "Evangelia Delli and Veronica Letka and Hodgson, {Peter David} and {Repiso Menendez}, Eva and Jonathan Hayton and Craig, {Adam Patrick} and Qi Lu and R Beanland and Anthony Krier and Marshall, {Andrew Robert Julian} and Carrington, {Peter James}",
year = "2019",
month = "2",
day = "28",
doi = "10.1021/acsphotonics.8b01550",
language = "English",
volume = "6",
pages = "538–544",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

AU - Delli, Evangelia

AU - Letka, Veronica

AU - Hodgson, Peter David

AU - Repiso Menendez, Eva

AU - Hayton, Jonathan

AU - Craig, Adam Patrick

AU - Lu, Qi

AU - Beanland, R

AU - Krier, Anthony

AU - Marshall, Andrew Robert Julian

AU - Carrington, Peter James

PY - 2019/2/28

Y1 - 2019/2/28

N2 - Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.

AB - Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.

KW - mid-infrared

KW - molecular beam epitaxy

KW - photodetector

KW - silicon photonics

KW - type-II superlattice

U2 - 10.1021/acsphotonics.8b01550

DO - 10.1021/acsphotonics.8b01550

M3 - Journal article

VL - 6

SP - 538

EP - 544

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 2

ER -