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Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

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Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range. / Repiso Menendez, Eva; Broderick, Christopher; de la Mata, Maria ; Arkani, Reza; Lu, Qi; Marshall, Andrew; Molina, Sergio; O'Reilly, Eoin ; Carrington, Peter; Krier, Anthony.

In: Journal of Physics D: Applied Physics, Vol. 52, 465102, 30.08.2019.

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Repiso Menendez, Eva ; Broderick, Christopher ; de la Mata, Maria ; Arkani, Reza ; Lu, Qi ; Marshall, Andrew ; Molina, Sergio ; O'Reilly, Eoin ; Carrington, Peter ; Krier, Anthony. / Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range. In: Journal of Physics D: Applied Physics. 2019 ; Vol. 52.

Bibtex

@article{c617f983c7d242609839bfd25257306f,
title = "Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range",
abstract = "We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers. ",
author = "{Repiso Menendez}, Eva and Christopher Broderick and {de la Mata}, Maria and Reza Arkani and Qi Lu and Andrew Marshall and Sergio Molina and Eoin O'Reilly and Peter Carrington and Anthony Krier",
year = "2019",
month = aug
day = "30",
doi = "10.1088/1361-6463/ab37cf",
language = "English",
volume = "52",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",

}

RIS

TY - JOUR

T1 - Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

AU - Repiso Menendez, Eva

AU - Broderick, Christopher

AU - de la Mata, Maria

AU - Arkani, Reza

AU - Lu, Qi

AU - Marshall, Andrew

AU - Molina, Sergio

AU - O'Reilly, Eoin

AU - Carrington, Peter

AU - Krier, Anthony

PY - 2019/8/30

Y1 - 2019/8/30

N2 - We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.

AB - We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.

U2 - 10.1088/1361-6463/ab37cf

DO - 10.1088/1361-6463/ab37cf

M3 - Journal article

VL - 52

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

M1 - 465102

ER -