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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range
AU - Repiso Menendez, Eva
AU - Broderick, Christopher
AU - de la Mata, Maria
AU - Arkani, Reza
AU - Lu, Qi
AU - Marshall, Andrew
AU - Molina, Sergio
AU - O'Reilly, Eoin
AU - Carrington, Peter
AU - Krier, Anthony
PY - 2019/8/30
Y1 - 2019/8/30
N2 - We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.
AB - We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.
U2 - 10.1088/1361-6463/ab37cf
DO - 10.1088/1361-6463/ab37cf
M3 - Journal article
VL - 52
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
M1 - 465102
ER -