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Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates

Research output: Contribution to journalJournal article

Published

  • S. B. Healy
  • R. J. Young
  • L. O. Mereni
  • V. Dimastrodonato
  • E. Pelucchi
  • E. P. O'Reilly

Associated organisational unit

Journal publication date09/2010
JournalPhysica E: Low-dimensional Systems and Nanostructures
Journal number10
Volume42
Number of pages4
Pages2761-2764
Original languageEnglish

Abstract

Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.