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Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • S. B. Healy
  • R. J. Young
  • L. O. Mereni
  • V. Dimastrodonato
  • E. Pelucchi
  • E. P. O'Reilly
<mark>Journal publication date</mark>1/09/2010
<mark>Journal</mark>Physica E: Low-dimensional Systems and Nanostructures
Issue number10
Number of pages4
Pages (from-to)2761-2764
Publication StatusPublished
<mark>Original language</mark>English


Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.