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Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates

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Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. / Healy, S. B.; Young, R. J.; Mereni, L. O. et al.
In: Physica E: Low-dimensional Systems and Nanostructures, Vol. 42, No. 10, 01.09.2010, p. 2761-2764.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Healy, SB, Young, RJ, Mereni, LO, Dimastrodonato, V, Pelucchi, E & O'Reilly, EP 2010, 'Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates', Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10, pp. 2761-2764. https://doi.org/10.1016/j.physe.2009.11.099

APA

Healy, S. B., Young, R. J., Mereni, L. O., Dimastrodonato, V., Pelucchi, E., & O'Reilly, E. P. (2010). Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. Physica E: Low-dimensional Systems and Nanostructures, 42(10), 2761-2764. https://doi.org/10.1016/j.physe.2009.11.099

Vancouver

Healy SB, Young RJ, Mereni LO, Dimastrodonato V, Pelucchi E, O'Reilly EP. Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. Physica E: Low-dimensional Systems and Nanostructures. 2010 Sept 1;42(10):2761-2764. doi: 10.1016/j.physe.2009.11.099

Author

Healy, S. B. ; Young, R. J. ; Mereni, L. O. et al. / Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates. In: Physica E: Low-dimensional Systems and Nanostructures. 2010 ; Vol. 42, No. 10. pp. 2761-2764.

Bibtex

@article{461a72d6cacb404a8d57a31cb758602f,
title = "Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates",
abstract = "Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.",
keywords = "Quantum dots, Theory , Growth",
author = "Healy, {S. B.} and Young, {R. J.} and Mereni, {L. O.} and V. Dimastrodonato and E. Pelucchi and O'Reilly, {E. P.}",
year = "2010",
month = sep,
day = "1",
doi = "10.1016/j.physe.2009.11.099",
language = "English",
volume = "42",
pages = "2761--2764",
journal = "Physica E: Low-dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "10",

}

RIS

TY - JOUR

T1 - Physics of novel site controlled InGaAs quantum dots on (1 1 1) oriented substrates

AU - Healy, S. B.

AU - Young, R. J.

AU - Mereni, L. O.

AU - Dimastrodonato, V.

AU - Pelucchi, E.

AU - O'Reilly, E. P.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.

AB - Recent work has shown that site-controlled dots (QD) grown on (1 1 1)B GaAs substrates, pre-patterned with tetrahedral pyramidal recesses (Baier et al., 2006) [1], (Pelucchi et al., 2007) [2], (Zhu et al., 2007) [3] are suitable for the generation of single and entangled photons (Young et al., 2009) [4]. We recently introduced InGaAs/GaAs site controlled QD structures which demonstrated record breaking spectral purity, and we showed that increasing the indium concentration of the active region allows easy tunability of the emission wavelength (Mereni et al., 2009) [5,6]. We present here the first theoretical analysis of the emission energies and optical properties of this system as a function of QD height and In concentration. We model the dots using an 8 band k.p theory chosen to provide the best convergence and performance for structures oriented specifically along the (1 1 1) crystallographic direction. (C) 2009 Elsevier B.V. All rights reserved.

KW - Quantum dots

KW - Theory

KW - Growth

U2 - 10.1016/j.physe.2009.11.099

DO - 10.1016/j.physe.2009.11.099

M3 - Journal article

VL - 42

SP - 2761

EP - 2764

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

SN - 1386-9477

IS - 10

ER -