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Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. / Mahajumi, Abu Syed; Carrington, Peter; Kostakis, Ioannis et al.
In: Journal of Physics D: Applied Physics, Vol. 46, No. 30, 305104, 31.07.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Mahajumi, AS, Carrington, P, Kostakis, I, Missous, M, Sanchez, A, Zhuang, Q, Young, R, Hayne, M & Krier, A 2013, 'Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks', Journal of Physics D: Applied Physics, vol. 46, no. 30, 305104. https://doi.org/10.1088/0022-3727/46/30/305104

APA

Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M., & Krier, A. (2013). Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, 46(30), Article 305104. https://doi.org/10.1088/0022-3727/46/30/305104

Vancouver

Mahajumi AS, Carrington P, Kostakis I, Missous M, Sanchez A, Zhuang Q et al. Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics. 2013 Jul 31;46(30):305104. doi: 10.1088/0022-3727/46/30/305104

Author

Mahajumi, Abu Syed ; Carrington, Peter ; Kostakis, Ioannis et al. / Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. In: Journal of Physics D: Applied Physics. 2013 ; Vol. 46, No. 30.

Bibtex

@article{7aa0c794516c457cbc5014637dae95c0,
title = "Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks",
abstract = "The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.",
keywords = "MOLECULAR-BEAM EPITAXY, LOCALIZATION",
author = "Mahajumi, {Abu Syed} and Peter Carrington and Ioannis Kostakis and Mohammed Missous and Ana Sanchez and Qiandong Zhuang and Robert Young and Manus Hayne and Anthony Krier",
year = "2013",
month = jul,
day = "31",
doi = "10.1088/0022-3727/46/30/305104",
language = "English",
volume = "46",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "30",

}

RIS

TY - JOUR

T1 - Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

AU - Mahajumi, Abu Syed

AU - Carrington, Peter

AU - Kostakis, Ioannis

AU - Missous, Mohammed

AU - Sanchez, Ana

AU - Zhuang, Qiandong

AU - Young, Robert

AU - Hayne, Manus

AU - Krier, Anthony

PY - 2013/7/31

Y1 - 2013/7/31

N2 - The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.

AB - The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.

KW - MOLECULAR-BEAM EPITAXY

KW - LOCALIZATION

U2 - 10.1088/0022-3727/46/30/305104

DO - 10.1088/0022-3727/46/30/305104

M3 - Journal article

VL - 46

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 30

M1 - 305104

ER -