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Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

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Article number305104
<mark>Journal publication date</mark>31/07/2013
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number30
Number of pages6
Publication StatusPublished
<mark>Original language</mark>English


The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.