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Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Research output: Contribution to journalJournal article

Published
Article number43
<mark>Journal publication date</mark>2/11/2016
<mark>Journal</mark>Journal of Physics D: Applied Physics
Issue number43
Volume49
Number of pages4
Pages (from-to)435107
Publication statusPublished
Early online date4/10/16
Original languageEnglish

Abstract

Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in-situ by reflection high energy electron diffraction and ex-situ by high resolution X-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~ 4.20 µm and peak detectivity D* =1.25×109 cm Hz1/2 W-1.