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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE
AU - Kesaria, Manoj
AU - De La Mare, Martin
AU - Krier, Anthony
PY - 2016/11/2
Y1 - 2016/11/2
N2 - Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in-situ by reflection high energy electron diffraction and ex-situ by high resolution X-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~ 4.20 µm and peak detectivity D* =1.25×109 cm Hz1/2 W-1.
AB - Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in-situ by reflection high energy electron diffraction and ex-situ by high resolution X-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~ 4.20 µm and peak detectivity D* =1.25×109 cm Hz1/2 W-1.
KW - Dilute Nitride
KW - InAsSbN
KW - MBE
KW - Photodiodes
M3 - Journal article
VL - 49
SP - 435107
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 43
M1 - 43
ER -