Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Room temperature photoluminescence at 4.5 mu m from InAsN
AU - Zhuang, Q.
AU - Godenir, A. M. R.
AU - Krier, A.
AU - Lai, K. T.
AU - Haywood, S. K.
N1 - Article number: 063520
PY - 2008/3/26
Y1 - 2008/3/26
N2 - Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics
AB - Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics
UR - http://www.scopus.com/inward/record.url?scp=41549103838&partnerID=8YFLogxK
U2 - 10.1063/1.2896638
DO - 10.1063/1.2896638
M3 - Journal article
VL - 103
SP - 063520
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 1089-7550
IS - 6
ER -