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Room temperature photoluminescence at 4.5 mu m from InAsN

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Room temperature photoluminescence at 4.5 mu m from InAsN. / Zhuang, Q.; Godenir, A. M. R.; Krier, A.; Lai, K. T.; Haywood, S. K.

In: Journal of Applied Physics, Vol. 103, No. 6, 26.03.2008, p. 063520.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Zhuang, Q, Godenir, AMR, Krier, A, Lai, KT & Haywood, SK 2008, 'Room temperature photoluminescence at 4.5 mu m from InAsN', Journal of Applied Physics, vol. 103, no. 6, pp. 063520. https://doi.org/10.1063/1.2896638

APA

Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 mu m from InAsN. Journal of Applied Physics, 103(6), 063520. https://doi.org/10.1063/1.2896638

Vancouver

Zhuang Q, Godenir AMR, Krier A, Lai KT, Haywood SK. Room temperature photoluminescence at 4.5 mu m from InAsN. Journal of Applied Physics. 2008 Mar 26;103(6):063520. https://doi.org/10.1063/1.2896638

Author

Zhuang, Q. ; Godenir, A. M. R. ; Krier, A. ; Lai, K. T. ; Haywood, S. K. / Room temperature photoluminescence at 4.5 mu m from InAsN. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 6. pp. 063520.

Bibtex

@article{041c615ce4c34d3287fb8071a8bf3f72,
title = "Room temperature photoluminescence at 4.5 mu m from InAsN",
abstract = "Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. {\textcopyright}2008 American Institute of Physics",
author = "Q. Zhuang and Godenir, {A. M. R.} and A. Krier and Lai, {K. T.} and Haywood, {S. K.}",
note = "Article number: 063520",
year = "2008",
month = mar,
day = "26",
doi = "10.1063/1.2896638",
language = "English",
volume = "103",
pages = "063520",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "6",

}

RIS

TY - JOUR

T1 - Room temperature photoluminescence at 4.5 mu m from InAsN

AU - Zhuang, Q.

AU - Godenir, A. M. R.

AU - Krier, A.

AU - Lai, K. T.

AU - Haywood, S. K.

N1 - Article number: 063520

PY - 2008/3/26

Y1 - 2008/3/26

N2 - Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics

AB - Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics

UR - http://www.scopus.com/inward/record.url?scp=41549103838&partnerID=8YFLogxK

U2 - 10.1063/1.2896638

DO - 10.1063/1.2896638

M3 - Journal article

VL - 103

SP - 063520

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -