Final published version
Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer
AU - Vialla, Fabien
AU - Danovich , Mark
AU - Ruiz-Tijerina, D. A.
AU - Massicotte, Mathieu
AU - Schmidt, Peter
AU - Taniguchi, Takashi
AU - Watanabe, Kenji
AU - Hunt, Ryan James
AU - Szyniszewski, Marcin
AU - Drummond, Neil
AU - Pederson, Thomas
AU - Falko, Vladimir
AU - Koppens, Frank H. L.
PY - 2019/5/22
Y1 - 2019/5/22
N2 - Due to their unique 2D nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence (PL) measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.
AB - Due to their unique 2D nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence (PL) measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.
U2 - 10.1088/2053-1583/ab168d
DO - 10.1088/2053-1583/ab168d
M3 - Journal article
VL - 6
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035032
ER -