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Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer

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Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer. / Vialla, Fabien; Danovich , Mark ; Ruiz-Tijerina, D. A. et al.
In: 2D Materials, Vol. 6, No. 3, 035032, 22.05.2019.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Vialla, F, Danovich , M, Ruiz-Tijerina, DA, Massicotte, M, Schmidt, P, Taniguchi, T, Watanabe, K, Hunt, RJ, Szyniszewski, M, Drummond, N, Pederson, T, Falko, V & Koppens, FHL 2019, 'Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer', 2D Materials, vol. 6, no. 3, 035032. https://doi.org/10.1088/2053-1583/ab168d

APA

Vialla, F., Danovich , M., Ruiz-Tijerina, D. A., Massicotte, M., Schmidt, P., Taniguchi, T., Watanabe, K., Hunt, R. J., Szyniszewski, M., Drummond, N., Pederson, T., Falko, V., & Koppens, F. H. L. (2019). Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer. 2D Materials, 6(3), Article 035032. https://doi.org/10.1088/2053-1583/ab168d

Vancouver

Vialla F, Danovich M, Ruiz-Tijerina DA, Massicotte M, Schmidt P, Taniguchi T et al. Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer. 2D Materials. 2019 May 22;6(3):035032. doi: 10.1088/2053-1583/ab168d

Author

Vialla, Fabien ; Danovich , Mark ; Ruiz-Tijerina, D. A. et al. / Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer. In: 2D Materials. 2019 ; Vol. 6, No. 3.

Bibtex

@article{56db509b79684d75be877a7c3e62ab6b,
title = "Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer",
abstract = "Due to their unique 2D nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence (PL) measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.",
author = "Fabien Vialla and Mark Danovich and Ruiz-Tijerina, {D. A.} and Mathieu Massicotte and Peter Schmidt and Takashi Taniguchi and Kenji Watanabe and Hunt, {Ryan James} and Marcin Szyniszewski and Neil Drummond and Thomas Pederson and Vladimir Falko and Koppens, {Frank H. L.}",
year = "2019",
month = may,
day = "22",
doi = "10.1088/2053-1583/ab168d",
language = "English",
volume = "6",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer

AU - Vialla, Fabien

AU - Danovich , Mark

AU - Ruiz-Tijerina, D. A.

AU - Massicotte, Mathieu

AU - Schmidt, Peter

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Hunt, Ryan James

AU - Szyniszewski, Marcin

AU - Drummond, Neil

AU - Pederson, Thomas

AU - Falko, Vladimir

AU - Koppens, Frank H. L.

PY - 2019/5/22

Y1 - 2019/5/22

N2 - Due to their unique 2D nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence (PL) measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.

AB - Due to their unique 2D nature, charge carriers in semiconducting transition metal dichalcogenides (TMDs) exhibit strong unscreened Coulomb interactions and sensitivity to defects and impurities. The versatility of van der Waals layer stacking allows spatially separating electrons and holes between different TMD layers with staggered band structure, yielding interlayer few-body excitonic complexes whose nature is still debated. Here we combine quantum Monte Carlo calculations with spectrally and temporally resolved photoluminescence (PL) measurements on a top- and bottom-gated MoSe2/WSe2 heterostructure, and identify the emitters as impurity-bound interlayer excitonic complexes. Using independent electrostatic control of doping and out-of-plane electric field, we demonstrate control of the relative populations of neutral and charged complexes, their emission energies on a scale larger than their linewidth, and an increase of their lifetime into the microsecond regime. This work unveils new physics of confined carriers and is key to the development of novel optoelectronics applications.

U2 - 10.1088/2053-1583/ab168d

DO - 10.1088/2053-1583/ab168d

M3 - Journal article

VL - 6

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 3

M1 - 035032

ER -