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  1. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In: Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Strain enhancement during annealing of GaAsN alloys.

    Zhuang, Q. D., Krier, A. & Stanley, C. R., 15/05/2007, In: Journal of Applied Physics. 101, 10, p. 103536

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Solid State Communications. 117, 8, p. 465-469 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Growth and emission tuning of InAs/InP quantum dots superlattice

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Journal of Crystal Growth. 227-228, p. 1084-1088 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F. & Zheng, H. Q., 2001, In: Journal of Vacuum Science and Technology B. 19, 4, p. 1475-1478 4 p.

    Research output: Contribution to Journal/Magazine › Journal article

  9. Published

    Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

    Zhuang, Q., Yoon, S. F., Zheng, H. Q. & Yuan, K. H., 2000, In: Journal of Crystal Growth. 216, 1-4, p. 57-61 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

    Zhuang, Q., Li, J. M., Zeng, Y. P., Yoon, S. F., Zheng, H. Q., Kong, M. Y. & Lin, L. Y., 2000, In: Journal of Crystal Growth. 212, 1-2, p. 352-355 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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