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Quantum Nanotechnology

  1. 2009
  2. Published

    Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range.

    de la Mare, M., Zhuang, Q., Krier, A., Patane, A. & Dhar, S., 22/07/2009, In: Applied Physics Letters. 95, 3, p. 031110

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Flexural resonator sensing device and method

    Bennett, J., Kolosov, O. & Matsiev, L., 21/07/2009, IPC No. G01N 11/10, Patent No. US7562557B2

    Research output: Patent

  4. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots

    Laird, E. A., Barthel, C., Rashba, E. I., Marcus, C. M., Hanson, M. P. & Gossard, A. C., 19/05/2009, In: Semiconductor Science and Technology. 24, 6, 7 p., 64004.

    Research output: Contribution to Journal/MagazineJournal article

  7. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Environmental control system fluid sensing system and method

    Matsiev, L., Kolosov, O., Uhrich, M., Rust, W., Feland, J., Varni, J. & Walker, B., 12/03/2009, IPC No. F25B 49/00; GOIN 29/036; GOIN 11/00; GOIN 9/00; GOIR 27/00, Patent No. US 2009/0064693 A1

    Research output: Patent

  9. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 5/03/2009, In: Applied Physics Letters. 94, 9, p. 091111

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

    Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V. & Krier, A., 03/2009, In: Microelectronics Journal. 40, 3, p. 469-472 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.

    Nuytten, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 03/2009, In: Microelectronics Journal. 40, 3, p. 486-488 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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