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Dr Adam Craig

Senior Research Associate, Research Student

  1. Published

    Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

    Letka, V., Keen, J., Craig, A. & Marshall, A. R. J., 6/10/2017, In: Proceedings of SPIE - The International Society for Optical Engineering. 10433, 7 p., 1043319.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Mid-wavelength infrared resonant cavity enhanced photodiodes for infrared spectroscopic sensing of chemicals and other narrow-band optical signals

    Savich, G. R., Wicks, G. W., Jamison, K., Fredin, L., Golding, T. D., Carmichael, M., Reilly, J., Craig, A. P., Al-Saymari, F. & Marshall, A. R., 2019, In: Proceedings of SPIE. 11002, 13 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. E-pub ahead of print

    Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Mid-infrared resonant cavity light emitting diodes operating at 4.5 μm

    Al-Saymari, F., Craig, A., Lu, Q., Marshall, A., Carrington, P. & Krier, A., 3/08/2020, In: Optics Express. 28, 16, p. 23338-23353 16 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In: Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

    Delli, E., Letka, V., Hodgson, P. D., Repiso Menendez, E., Hayton, J., Craig, A. P., Lu, Q., Beanland, R., Krier, A., Marshall, A. R. J. & Carrington, P. J., 20/02/2019, In: ACS Photonics. 6, 2, p. 538–544 7 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Low leakage-current InAsSb nanowire photodetectors on silicon

    Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M. & Marshall, A. R. J., 13/01/2016, In: Nano Letters. 16, 1, p. 182-187 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

    Craig, A., Marshall, A., Letka, V., Carmichael, M. & Golding, T., 21/06/2021, In: Applied Physics Letters. 118, 25, 5 p., 251103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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