• Published

  pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice

  Cao, P., Bentley, M., You, M., Wei, J., Peng, H., Wang, T., song, C., Zhuang, Q. & Zheng, W., 22/11/2024, In: Optics Letters. 49, 23, p. 6769-6772 4 p.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

  Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications

  Bentley, M., 2021, Lancaster University. 165 p.

  Research output: Thesis › Doctoral Thesis

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