• Published

  nBn mid-wavelength infrared photodetectors based on bulk InGaAsSb absorbers

  Cao, P., Wei, J., Bentley, M., Davison, N., Hu, Y., You, M., Peng, H., Wang, T., Zhuang, Q. & Zheng, W., 1/04/2025, In: Optical Materials Express. 15, 4, p. 717-723 7 p.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications

  Marko, I., Duffy, D. A., Bentley, M., Marshall, A. R. J., Rihani, S., Berry, G., Robertson, M., Rawsthorne, J., Carrington, P. J. & Sweeney, S., 28/03/2025, In: Journal of Physics D: Applied Physics. 58, 18, 185103.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  pBn type short-wavelength infrared photodetector with an ultralow dark current and extended wavelength based on a strained InGaAs/GaAsSb superlattice

  Cao, P., Bentley, M., You, M., Wei, J., Peng, H., Wang, T., song, C., Zhuang, Q. & Zheng, W., 22/11/2024, In: Optics Letters. 49, 23, p. 6769-6772 4 p.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

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