• Published

  Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

  Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

• Published

  1.55μm Efficient Temperature Insensitive GaSb-based Lasers for Telecoms Applications

  Bentley, M., 2021, Lancaster University. 165 p.

  Research output: Thesis › Doctoral Thesis

• E-pub ahead of print

  Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

  Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

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