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  • APL21-AR-02434

    Rights statement: Copyright 2021 American Institute of Physics. The following article appeared in Applied Physics Letters, ?, 2021 and may be found at http://dx.doi.org/10.1063/5.0051049 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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InAsSb-based detectors on GaSb for near-room -temperature operation in the mid-wave infrared

Research output: Contribution to journalJournal articlepeer-review

Forthcoming
Article number251103
<mark>Journal publication date</mark>21/06/2021
<mark>Journal</mark>Applied Physics Letters
Publication StatusAccepted/In press
<mark>Original language</mark>English

Abstract

III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb-InAs strained layer superlattice, operation close to room temperature was demonstrated with cut-off wavelengths of 4.82 μm and 5.79 μm, respectively, with zero-bias operation possible for the bulk-InAsSb detector. X-ray diffraction, temperature dependent dark current and spectral quantum efficiency were measured, and an analysis based on calculated specific detectivity carried out. 1/f noise effects are considered. Results indicate these optimized devices may be suitable as alternatives to InSb, or even HgCdTe, for many applications, especially where available power is limited.

Bibliographic note

Copyright 2021 American Institute of Physics. The following article appeared in Applied Physics Letters, ?, 2021 and may be found at http://dx.doi.org/10.1063/5.0051049 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.