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Research

Dr Adam Craig

Senior Research Associate, Research Student

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  1. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In: Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

    Craig, A., Reyner, C. J., Marshall, A. & Huffaker, D. L., 28/05/2014, In: Applied Physics Letters. 104, 4 p., 213502.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B. & Marshall, A., 20/05/2015, In: Applied Physics Letters. 106, 20, 5 p., 201103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In: Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

    Craig, A., Marshall, A. R. J., Tian, Z-B. & Krishna, S., 05/2015, In: Infrared Physics and Technology. 70, p. 107-110 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Novel structures for lattice-mismatched infrared photodetectors

    Craig, A. P., 2016, Lancaster University. 163 p.

    Research output: Thesis › Doctoral Thesis

  9. Published

    Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials

    Craig, A. P., Jain, M., Meriggi, L., Cann, T., Niblett, A., Collins, X. & Marshall, A. R. J., 4/02/2019, In: Applied Physics Letters. 114, 5, 5 p., 053501.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

    Craig, A. P., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G. R., Golding, T., Krier, A., Wicks, G. W. & Marshall, A. R., 15/04/2019, In: Applied Physics Letters. 114, 15, 5 p., 151107.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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