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Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Article number151107
<mark>Journal publication date</mark>15/04/2019
<mark>Journal</mark>Applied Physics Letters
Issue number15
Number of pages5
Publication StatusPublished
<mark>Original language</mark>English


We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W - 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.