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Research

Professor Anthony Krier

Emeritus Professor

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  1. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 2009, Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on . New York: IEEE, p. 2813-2814 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  2. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/12/2009, Conference on Lasers and Electro-Optics, CLEO 2009.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  3. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 1/01/2009, International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA)

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  4. Published

    Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., De Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 16/11/2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 5226114

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  5. Published

    Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

    Montesdeoca Cardenes, D., Carrington, P. J., Marko, I. P., Wagener, M. C., Sweeney, S. J. & Krier, A., 1/12/2018, In: Solar Energy Materials and Solar Cells. 187, 1, p. 227-232 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

  7. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

    Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Interface luminescence and lasing at a type II single broken-gap heterojunction

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, ZI. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  12. Published

    Mid-infrared lasers operating on a single quantum well at the type II heterointerface

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2001, LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2. p. 534-535 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  13. Published

    Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy.

    Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. & Airey, R., 1/02/2010, In: Applied Physics Letters. 96, 5, p. 052115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

    Mahajumi, A. S., Carrington, P., Kostakis, I., Missous, M., Sanchez, A., Zhuang, Q., Young, R., Hayne, M. & Krier, A., 31/07/2013, In: Journal of Physics D: Applied Physics. 46, 30, 6 p., 305104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Gain and threshold current in type II In(As)Sb mid-infrared quantum dot lasers

    Lu, Q., Zhuang, Q. & Krier, A., 15/04/2015, In: Photonics. 2, 2, p. 414-425 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000°C

    Lu, Q., Zhou, X., Krysa, A., Marshall, A., Carrington, P., Tan, C-H. & Krier, A., 1/06/2018, In: Solar Energy Materials and Solar Cells. 179, p. 334-338 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

    Lu, Q., Montesdeoca Cardenes, D., Carrington, P. J., Marshall, A. R. J., Krier, A. & Beanland, R., 1/03/2019, In: Solar Energy Materials and Solar Cells. 191, p. 406-412 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications

    Lu, Q., Marshall, A. & Krier, A., 29/05/2019, In: Materials. 12, 11, 8 p., 1743.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency

    Lu, Q., Krier, A., Zhou, Y., Cai, X., Xu, Z., Chen, J. & He, L., 27/06/2019, In: Applied Physics Letters. 114, 25, 5 p., 253507.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Mid-infrared interband cascade light-emitting diodes with InAs/GaAßb superlattices on InAs substrates: Smart Photonic and Optoelectronic Integrated Circuits XXII 2020

    Lu, Q., Zhou, Y., Chen, J., He, L., Krier, A., S., H. (ed.), L., V. (ed.) & (SPIE), T. S. O. P-O. I. E., 1/02/2020.

    Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

  23. Published

    Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

    Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In: Applied Physics Letters. 89, 20, p. 201115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

    Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In: Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys.

    Kudrawiec, R., Misiewicz, J., Zhuang, Q., Godenir, A. M. R. & Krier, A., 14/04/2009, In: Applied Physics Letters. 94, 15, p. 151902

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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