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Professor Anthony Krier

Emeritus Professor

  1. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  3. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes.

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 129-131 3 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  4. Published

    InSb-based quantum dot nanostructures for mid-infrared photonic devices

    Carrington, P. J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A. R. J., Zhuang, Q. & Krier, A., 16/09/2016, In: Proceedings of SPIE. 9919, 99190C.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Interface luminescence and lasing at a type II single broken-gap heterojunction

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2003, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Alferov, ZI. & Esaki, L. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, p. 340-342 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  7. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

    Moiseev, K. D., Krier, A., Mikhailova, M. P. & Yakovlev, Y. P., 7/04/2002, In: Journal of Physics D: Applied Physics. 35, 7, p. 631-636 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Investigation on InGaAs/InAlAs quantum cascade lasers.

    Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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