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Research

Professor Anthony Krier

Emeritus Professor

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  1. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

    Khan, A., Herrera, M., Pizarro, J., Galindo, P. L., Carrington, P. J., Fujita, H., Krier, A. & Molina, S. I., 1/02/2019, In: Journal of Materials Science. 54, 4, p. 3230-3241 12 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

    Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 16/12/2019, In: Nanotechnology. 31, 10, 9 p., 105702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Seeing the invisible - ultrasonic force microscopy for true subsurface elastic imaging of semiconductor nanostructures with nanoscale resolution

    Kolosov, O., Dinelli, F., Henini, M., Krier, A., Hayne, M. & Pingue, P., 2012, NSTI-Nanotech 2012. Santa Clara, USA: CRC PRESS-TAYLOR & FRANCIS GROUP, p. 24-26 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  6. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

    Kozlova, N. V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q., Krier, A. & Patane, A., 2/10/2012, In: Nature Communications. 3, 5 p., 1097.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 21/01/2006, In: Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

    Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 21/05/2007, In: Applied Physics Letters. 90, 21, p. 211115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .

    Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 20/08/2007, In: Applied Physics Letters. 91, 8, p. 082102

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

    Krier, A., Stone, M. & Krier, S. E., 06/2007, In: Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

    Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In: Applied Physics Letters. 89, 9, p. 091110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

    Krier, A. & Suleiman, W., 21/08/2006, In: Applied Physics Letters. 89, 8, p. 083512

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In: Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    Mid-infrared ring laser. .

    Krier, A., Sherstnev, V. V., Wright, D., Monakhov, A. M. & Hill, G., 12/06/2003, In: Electronics Letters. 39, 12, p. 916-917 2 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In: Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

    Krier, A., Gao, H. H. & Sherstnev, V. V., 06/2000, In: IEE Proceedings - Optoelectronics. 147, 3, p. 217-221 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    High power 4.6 mu m light emitting diodes for CO detection. .

    Krier, A., Gao, H. H., Sherstnev, V. V. & Yakovlev, Y., 21/12/1999, In: Journal of Physics D: Applied Physics. 32, 24, p. 3117-3121 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Mid-infrared electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 11/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 15, 3, p. 159-163 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In: Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

    Krier, A., Krier, S. E. & Labadi, Z., 09/2000, In: Applied Physics A. 71, 3, p. 249-253 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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