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Research

Dr George Adamopoulos

Senior Lecturer

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  1. 2015
  2. Published

    High-mobility Gallium Indium Zinc Oxide-based thin film transistors grown by Spray Pyrolysis in Air

    Afouxenidis, D., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  3. Published

    Low-voltage ZnO thin-film transistors employing Nd2O3 high-k dielectrics deposited by spray pyrolysis in air

    Bin Esro, M., Kolosov, O., Vourlias, G., Krier, A., Milne, W. I. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  4. Published

    Solution processed a-LaAlO3 gate dielectrics for their applications in thin film transistors employing metal oxide semiconducting channels

    Bin Esro, M., Mazzocco, R., Vourlias, G., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Poster › peer-review

  5. Published

    High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics

    Bin Esro, M., Vourlias, G., Somerton, C., Milne, W. I. & Adamopoulos, G., 7/01/2015, In: Advanced Functional Materials. 25, 1, p. 134-141 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

    Bin Esro, M., Mazzocco, R., Vourlias, G., Kolosov, O., Milne, W. I. & Adamopoulos, G., 22/05/2015, In: Applied Physics Letters. 106, 5 p., 203507.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. 2016
  9. Published

    (INVITED) Solution processed gate dielectrics for their use in Thin Film Transistors employing metal oxide-based semiconducting channels

    Adamopoulos, G., 03/2016.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  10. Published

    Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

    Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P. & Adamopoulos, G., 28/04/2016, In: Journal of Materials Chemistry C. 4, 16, p. 3563-3570 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    (INVITED) Solution processed p- and n-type thin film transistors employing metal oxide-based semiconducting channels

    Adamopoulos, G., 05/2016.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

  12. Published

    High mobility, solution processed p-type TFTs employing NiOx semiconducting channels

    Afouxenidis, D., Milne, W. I. & Adamopoulos, G., 05/2016.

    Research output: Contribution to conference - Without ISBN/ISSN › Speech

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