Home > Research > Publications & Outputs > High-mobility ZnO thin film transistors based o...


Text available via DOI:

View graph of relations

High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>7/01/2015
<mark>Journal</mark>Advanced Functional Materials
Issue number1
Number of pages8
Pages (from-to)134-141
Publication StatusPublished
Early online date10/11/14
<mark>Original language</mark>English


The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution-processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high-quality hafnium oxide (HfO2) gate dielectrics and their implementation in thin film transistors employing spray-coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X-ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field-effect measurements. Analyses reveal polycrystalline HfO2 layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO2/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (∼107) and electron mobility in excess of 40 cm2 V−1 s−1.