• Published

  High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics

  Bin Esro, M., Vourlias, G., Somerton, C., Milne, W. I. & Adamopoulos, G., 7/01/2015, In: Advanced Functional Materials. 25, 1, p. 134-141 8 p.

  Research output: Contribution to Journal/Magazine › Journal article › peer-review

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