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Research

Dr Manoj Kesaria

Formerly at Lancaster University

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  1. Published

    Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3

    Kesaria, M. & Shivaprasad, S. M., 4/10/2011, In: Applied Physics Letters. 99, 14, 4 p., 143105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 15/09/2011, In: Crystal Growth and Design. 11, 11, p. 4900-4903 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

    Kesaria, M., Shetty, S., Cohen, P. I. & Shivaprasad, S. M., 11/2011, In: Materials Research Bulletin. 46, 11, p. 1811-1813 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Spontaneous formation of GaN nanostructures by molecular beam epitaxy

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 07/2011, In: Journal of Crystal Growth. 326, 1, p. 191-194 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

    Kesaria, M., Kumar, M., Gupta, G. & Shivaprasad, S. M., 10/2009, In: Applied Surface Science. 256, p. 576-579 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 131605-131608 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

    Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. & Krier, A., 12/05/2014, In: Semiconductor Science and Technology. 29, 7, 8 p., 075011 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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