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Dr Manoj Kesaria

Formerly at Lancaster University

  1. Published

    Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 15/09/2011, In: Crystal Growth and Design. 11, 11, p. 4900-4903 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

    Kesaria, M., Shetty, S., Cohen, P. I. & Shivaprasad, S. M., 11/2011, In: Materials Research Bulletin. 46, 11, p. 1811-1813 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Spontaneous formation of GaN nanostructures by molecular beam epitaxy

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 07/2011, In: Journal of Crystal Growth. 326, 1, p. 191-194 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

    Kesaria, M., Kumar, M., Gupta, G. & Shivaprasad, S. M., 10/2009, In: Applied Surface Science. 256, p. 576-579 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    In(AsN) mid-infrared emission enhanced by rapid thermal annealing

    Kesaria, M., Birindelli, S., A.V. Velichko, A. V., Zhuang, Q., Patane, A., Capizzi, M. & Krier, A., 01/2015, In: Infrared Physics and Technology. 68, p. 138-142 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

    Keen, J., Lane, D., Kesaria, M., Marshall, A. R. J. & Krier, A., 30/01/2018, In: Journal of Physics D: Applied Physics. 51, 7, 9 p., 075103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared

    Keen, J., Repiso Menendez, E., Lu, Q., Kesaria, M., Marshall, A. R. J. & Krier, A., 09/2018, In: Infrared Physics and Technology. 93, p. 375-380 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In: Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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