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Professor Manus Hayne SFHEA

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  1. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

    Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J. & Hayne, M., 6/07/2012, In: Physical review B. 86, 3, p. - 6 p., 035305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

    Cornet, C., Hayne, M., Caroff, P., Levallois, C., Joulaud, L., Homeyer, E., Paranthoen, C., Even, J., Labbe, C., Folliot, H., Moshchalkov, V. V. & Loualiche, S., 18/12/2006, In: Physical review B. 74, 24, p. - 10 p., 245315.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications

    Cornet, C., Hayne, M., Schliwa, A., Dore, F., Even, J., Bimberg, D., Moshchalkov, V. V. & Loualiche, S., 7/02/2007, In: Physica Status Solidi C. 4, 2, p. 458-461 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    InAs/InP quantum dots: from single to coupled dots applications

    Cornet, C., Schliwa, A., Hayne, M., Chauvin, N., Dore, F., Even, J., Moshchalkov, V. V., Bimberg, D., Bremond, G., Bru-Chevallier, C., Gendry, M. & Loualiche, S., 12/2006, In: Physica Status Solidi C. 3, 11, p. 4039-4042 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopy

    Maes, J., Henini, M., Hayne, M., Patane, A., Pulizzi, F., Eaves, L., Main, P. C. & Moshchalkov, V. V., 1/01/2002, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., p. 361-362 2 p. 1037909. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. & Hayne, M., 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

  8. Published

    Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

    Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  10. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Hole coupling in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 02/2000, In: Physica E: Low-dimensional Systems and Nanostructures. 6, 1-4, p. 436-439 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    High-field Zeeman contribution to the trion binding energy

    Vanhoucke, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 15/01/2002, In: Physical review B. 65, 4, p. - 4 p., 041307.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    High-field spin-polarization transition in the Landau bands of quasi-2D electron gases with strong lateral modulation

    Petit, F., Sfaxi, L., Lelarge, F., Cavanna, A., Hayne, M. & Etienne, B., 20/04/1997, In: EPL. 38, 3, p. 225-230 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    High-field magneto-photoluminescence of semiconductor nanostructures

    Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.

    Research output: Contribution to Journal/Magazine › Literature review › peer-review

  15. Published

    High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

    Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A. & Schmidt, O. G., 27/04/2006, In: Physical review B. 73, 15, 8 p., 155334.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

    Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

    Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P. & Koenraad, P. M., 2/04/2012, In: Applied Physics Letters. 100, 14, p. - 3 p., 142116.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

    Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Extended excitons and compact heliumlike biexcitons in type-II quantum dots.

    Bansal, B., Godefroo, S., Hayne, M., Medeiros-Ribeiro, G. & Moshchalkov, V., 18/11/2009, In: Physical review B. 80, 20, 205137.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Experimental observation of the negatively charged exciton stales in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 12/2000, In: Nanotechnology. 11, 4, p. 281-285 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Excitonic Mott transition in type-II quantum dots.

    Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Excitonic and free-carrier recombination of a two-dimensional electron gas in high magnetic fields

    Hayne, M., Jones, C. L., Bogaerts, R., Usher, A., Herlach, F., Moshchalkov, V. V. & Henini, M., 12/1998, In: Physica B: Condensed Matter. 256, p. 327-330 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots

    Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  26. Published

    Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field.

    Sidor, Y., Partoens, B., Peeters, F. M., Maes, J., Hayne, M., Fuster, D., Gonzalez, Y., Gonzalez, L. & Moshchalkov, V. V., 19/11/2007, In: Physical review B. 76, 195320, p. 1-9 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  27. Published

    Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

    Hayne, M., USHER, A., HARRIS, J. J. & FOXON, C. T., 15/10/1992, In: Physical review B. 46, 15, p. 9515-9519 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  28. Published

    Erratum: Electron wave-function spillover in self-assembled InAs/InP quantum wires (vol 70, art no 155311, 2004)

    Fuster, D., Garcia, J. M., Gonzalez, L., Gonzalez, Y., Hayne, M., Maes, J., Moshchalkov, V. V., Partoens, B., Peeters, F. M. & Sidor, Y., 12/11/2007, In: Physical review B. 76, 1 p., 199902(E).

    Research output: Contribution to Journal/Magazine › Journal article

  29. Published

    Energy levels of negatively charged excitons in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 2000, In: Solid State Communications. 115, 8, p. 403-406 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  30. Published

    Energy level diagram of X- in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 1/12/2000, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Alferov, ZH. & Esaki, L. (eds.). p. 252-255 4 p. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  31. Published

    Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

    Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter

  32. Published

    Electron wave-function spillover in self-assembled InAs/InP quantum wires

    Maes, J., Hayne, M., Sidor, Y., Partoens, B., Peeters, F. M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 15/10/2004, In: Physical review B. 70, 15, 7 p., 155311.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  33. Published

    Electron localization by self-assembled GaSb/GaAs quantum dots.

    Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R. & Bimberg, D., 16/06/2003, In: Applied Physics Letters. 82, 24, p. 4355-4357 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  34. Published

    Electron and hole confinement in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 15/10/2000, In: Physical review B. 62, 15, p. 10324-10328 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  35. Published

    Electron and hole confinement in stacked self-assembled InP dots of different sizes

    Hayne, M., Maes, J., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2001, In: physica status solidi (b). 224, 1, p. 31-35 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  36. Published

    Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

    Mamor, M., Pipeleers, B., Auret, F. D., Maes, J., Hayne, M., Moshchalkov, V. V. & Vantomme, A., 15/12/2003, In: Materials Science and Engineering: B . 105, 1-3, p. 179-183 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  37. Published

    Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses

    Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.

    Research output: Contribution to conference - Without ISBN/ISSN › Abstract

  38. Published

    Effective masses in high-mobility 2D electron gas structures

    Coleridge, P. T., Hayne, M., Zawadzki, P. & Sachrajda, A. S., 20/07/1996, In: Surface Science. 362, 1-3, p. 560-563 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  39. Published

    Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  40. Published

    Diamond as a magnetic field calibration probe

    Maes, J., Iakoubovskii, K., Hayne, M., Stesmans, A. & Moshchalkov, V. V., 7/04/2004, In: Journal of Physics D: Applied Physics. 37, 7, p. 1102-1106 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  41. Published

    Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

    Maes, J., Hayne, M., Moshchalkov, V. V., Patane, A., Henini, M., Eaves, L. & Main, P. C., 19/08/2002, In: Applied Physics Letters. 81, 8, p. 1480-1482 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  42. Published

    Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

    Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  43. Published

    Defect formation in InGaAs/AlSb/InAs memory devices

    Trevisan, A., Hodgson, P., Lane, D., Hayne, M. & Koenraad, P. M., 25/05/2023, In: Journal of Vacuum Science and Technology B. 41, 4, 044001.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  44. Published

    Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

    Hayne, M., Maes, J., Bersier, S., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 189-192 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  45. Published

    Control of complex quantum structures in droplet epitaxy

    Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  46. Published

    Confinement in self-assembled InAs/InP quantum wires studied by magneto-photoluminescence

    Maes, J., Hayne, M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 261-264 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  47. Published

    Classification and control of the origin of photoluminescence from Si nanocrystals.

    Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G. & Moshchalkov, V. V., 2/03/2008, In: Nature Nanotechnology. 3, 3, p. 174-178 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  48. Published

    Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells

    Nuytten, T., Hayne, M., Bansal, B., Liu, H. Y., Hopkinson, M. & Moshchalkov, V. V., 5/07/2011, In: Physical review B. 84, 045302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  49. Published

    Charge confinement and uniformity of stacked InP quantum dots studied by magneto-optical spectroscopy

    Maes, J., Hayne, M., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 13, 2-4, p. 203-207 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  50. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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