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Professor Manus Hayne SFHEA

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  1. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

    Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J. & Hayne, M., 6/07/2012, In: Physical review B. 86, 3, p. - 6 p., 035305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

    Cornet, C., Hayne, M., Caroff, P., Levallois, C., Joulaud, L., Homeyer, E., Paranthoen, C., Even, J., Labbe, C., Folliot, H., Moshchalkov, V. V. & Loualiche, S., 18/12/2006, In: Physical review B. 74, 24, p. - 10 p., 245315.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications

    Cornet, C., Hayne, M., Schliwa, A., Dore, F., Even, J., Bimberg, D., Moshchalkov, V. V. & Loualiche, S., 7/02/2007, In: Physica Status Solidi C. 4, 2, p. 458-461 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    InAs/InP quantum dots: from single to coupled dots applications

    Cornet, C., Schliwa, A., Hayne, M., Chauvin, N., Dore, F., Even, J., Moshchalkov, V. V., Bimberg, D., Bremond, G., Bru-Chevallier, C., Gendry, M. & Loualiche, S., 12/2006, In: Physica Status Solidi C. 3, 11, p. 4039-4042 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopy

    Maes, J., Henini, M., Hayne, M., Patane, A., Pulizzi, F., Eaves, L., Main, P. C. & Moshchalkov, V. V., 1/01/2002, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., p. 361-362 2 p. 1037909. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. & Hayne, M., 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

  8. Published

    Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

    Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  10. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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