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Professor Manus Hayne SFHEA

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  1. Published

    Long-Wavelength Photoluminescence from Stacked Layers of High-Quality Type-II GaSb/GaAs Quantum Rings

    Carrington, P. J., Young, R. J., Hodgson, P. D., Sanchez, A. M., Hayne, M. & Krier, A., 03/2013, In: Crystal Growth and Design. 13, 3, p. 1226-1230 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

    Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J. & Hayne, M., 6/07/2012, In: Physical review B. 86, 3, p. - 6 p., 035305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

    Cornet, C., Hayne, M., Caroff, P., Levallois, C., Joulaud, L., Homeyer, E., Paranthoen, C., Even, J., Labbe, C., Folliot, H., Moshchalkov, V. V. & Loualiche, S., 18/12/2006, In: Physical review B. 74, 24, p. - 10 p., 245315.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    InAs/InP quantum dots (QD): From fundamental understanding to coupled QD 1.55 mu m laser applications

    Cornet, C., Hayne, M., Schliwa, A., Dore, F., Even, J., Bimberg, D., Moshchalkov, V. V. & Loualiche, S., 7/02/2007, In: Physica Status Solidi C. 4, 2, p. 458-461 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    InAs/InP quantum dots: from single to coupled dots applications

    Cornet, C., Schliwa, A., Hayne, M., Chauvin, N., Dore, F., Even, J., Moshchalkov, V. V., Bimberg, D., Bremond, G., Bru-Chevallier, C., Gendry, M. & Loualiche, S., 12/2006, In: Physica Status Solidi C. 3, 11, p. 4039-4042 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopy

    Maes, J., Henini, M., Hayne, M., Patane, A., Pulizzi, F., Eaves, L., Main, P. C. & Moshchalkov, V. V., 1/01/2002, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., p. 361-362 2 p. 1037909. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES

    Lane, D. & Hayne, M., 3/12/2020, IPC No. G11C 16/04 2006.01, Patent No. WO/2020/240186, 28/05/2020

    Research output: Patent

  8. Published

    Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.

    Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  10. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Hole coupling in stacked self-assembled InP quantum dots

    Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 02/2000, In: Physica E: Low-dimensional Systems and Nanostructures. 6, 1-4, p. 436-439 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    High-field Zeeman contribution to the trion binding energy

    Vanhoucke, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 15/01/2002, In: Physical review B. 65, 4, p. - 4 p., 041307.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    High-field spin-polarization transition in the Landau bands of quasi-2D electron gases with strong lateral modulation

    Petit, F., Sfaxi, L., Lelarge, F., Cavanna, A., Hayne, M. & Etienne, B., 20/04/1997, In: EPL. 38, 3, p. 225-230 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    High-field magneto-photoluminescence of semiconductor nanostructures

    Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.

    Research output: Contribution to Journal/Magazine › Literature review › peer-review

  15. Published

    High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

    Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A. & Schmidt, O. G., 27/04/2006, In: Physical review B. 73, 15, 8 p., 155334.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

    Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

    Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P. & Koenraad, P. M., 2/04/2012, In: Applied Physics Letters. 100, 14, p. - 3 p., 142116.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  19. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  20. Published

    GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

    Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Extended excitons and compact heliumlike biexcitons in type-II quantum dots.

    Bansal, B., Godefroo, S., Hayne, M., Medeiros-Ribeiro, G. & Moshchalkov, V., 18/11/2009, In: Physical review B. 80, 20, 205137.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    Experimental observation of the negatively charged exciton stales in high magnetic fields

    Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 12/2000, In: Nanotechnology. 11, 4, p. 281-285 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. Published

    Excitonic Mott transition in type-II quantum dots.

    Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  24. Published

    Excitonic and free-carrier recombination of a two-dimensional electron gas in high magnetic fields

    Hayne, M., Jones, C. L., Bogaerts, R., Usher, A., Herlach, F., Moshchalkov, V. V. & Henini, M., 12/1998, In: Physica B: Condensed Matter. 256, p. 327-330 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots

    Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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