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Dr Min Yin

Formerly at Lancaster University

  1. Conference contribution/Paper
  2. Published

    Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

    Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D., 2006, Technologies for Optical Countermeasures III. Titterton, DH. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  3. Journal article
  4. Published

    Low bandgap InAs-based thermophotovoltaic cells for heat-electricity conversion

    Krier, A., Yin, M., Marshall, A. R. J. & Krier, S. E., 06/2016, In: Journal of Electronic Materials. 45, 6, p. 2826-2830 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

    Krier, A., Yin, M., Marshall, A., Kesaria, M., Krier, S., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. & Scholes, A., 11/2015, In: Infrared Physics and Technology. 73, p. 126-129 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    Lu, Q., Zhuang, Q., Hayton, J., Yin, M. & Krier, A., 2014, In: Applied Physics Letters. 105, 3, 3 p., 031115.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    A systematic study of the effect of interrupted ageing conditions on the strength and toughness development of AA6061

    Risanti, D. D., Yin, M., del Castillo, P. E. J. R. D. & van der Zwaag, S., 15/10/2009, In: Materials Science and Engineering: A. 523, 1-2, p. 99-111 13 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K.

    Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. & Ashley, T., 5/03/2009, In: Applied Physics Letters. 94, 9, p. 091111

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.

    Yin, M., Nash, G. R., Coomber, S. D., Buckle, L., Carrington, P. J., Krier, A., Andreev, A., Przeslak, S. J. B., de Valicourt, G., Smith, S. J., Emeny, M. T. & Ashley, T., 23/09/2008, In: Applied Physics Letters. 93, 12, p. 121106

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. Published

    Midinfrared GaInSb/AlGaInSb quantum well laser diodes grown on GaAs. .

    Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T. & Ashley, T., 24/09/2007, In: Applied Physics Letters. 91, 13, p. 131118

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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