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Dr Peter Carrington

Senior Lecturer

  1. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE.

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, Narrow Gap Semiconductors 2007 : Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK. Murdin, B. N. & Clowes, S. K. (eds.). 119 ed. Bristol: Jointly published by Springer Netherlands and Canopus Publishing Limited, Bristol, p. 69-72 4 p. (Springer Proceedings in Physics).

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  2. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  3. Published

    Development of dilute nitride materials for mid-infrared diode lasers

    Krier, A., de la Mare, M., Carrington, P. J., Thompson, M., Zhuang, Q., Patane, A. & Kudrawiec, R., 09/2012, In: Semiconductor Science and Technology. 27, 9, 8 p., 094009 .

    Research output: Contribution to journalJournal articlepeer-review

  4. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN Conference paperpeer-review

  5. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In: Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to journalJournal articlepeer-review

  6. Published

    Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

    Garduno-Nolasco, E., Carrington, P. J., Krier, A. & Missous, M., 04/2014, In: IET Optoelectronics. 8, 2, p. 71-75 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  7. Published

    Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation

    James Asirvatham, J., Fujita, H., Carrington, P., Marshall, A. & Krier, A., 04/2014, In: IET Optoelectronics. 8, 2, p. 76-80 5 p.

    Research output: Contribution to journalJournal articlepeer-review

  8. Published

    Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

    Fujita, H., James Asirvatham, J., Carrington, P., Marshall, A., Krier, A., Wagener, M. C. & Botha, J. R., 03/2014, In: Semiconductor Science and Technology. 29, 3, 5 p., 035014.

    Research output: Contribution to journalJournal articlepeer-review

  9. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to journalJournal articlepeer-review

  10. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

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