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  • EL_InAsSb_AlInAs_on_GaAs_and_Si_revision (2)

    Rights statement: This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal for Crystal Growth, 586, 126627, 2022 DOI: 10.1016/j.jcrysgro.2022.126627

    Accepted author manuscript, 1.05 MB, PDF document

    Available under license: CC BY-NC-ND: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License

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Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published
Article number126627
<mark>Journal publication date</mark>15/05/2022
<mark>Journal</mark>Journal of Crystal Growth
Volume586
Number of pages6
Publication StatusPublished
Early online date18/03/22
<mark>Original language</mark>English

Abstract

Heteroepitaxy of mid-infrared Sb-based III-V semiconductor devices on highly mismatched wafers such as GaAs
and silicon are a promising route towards high-density integration benefiting from the mature fabrication
technology of these substrates. This work reports on the electrical performance of heteroepitaxially grown midinfrared InAs0.915Sb0.085/Al0.12In0.88As multi-quantum wells light emitting diodes on GaAs and offcut Si substrates using molecular beam epitaxy. Both devices exhibited a strong room temperature electroluminescence
signal peaking at around 3.4 µm. Analysis of the output power results obtained from both devices revealed that
the Si-based LED exhibited higher external quantum efficiency despite the higher defect density which is
attributed to the superior thermal properties of the Si wafer.

Bibliographic note

This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal for Crystal Growth, 586, 126627, 2022 DOI: 10.1016/j.jcrysgro.2022.126627

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