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Research

Dr Peter Carrington

Senior Lecturer

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  1. 2025
  2. E-pub ahead of print

    Photoluminescence Properties of Type-II GaSb/GaAs Quantum Rings

    Gandan, S., Musial, A., Rudno-Rudzinsk, W., Mikulicz, M., Montesdeoca Cardenes, D., Schmidt, M., Morales, J., Marshall, A., Krier, A., Carrington, P. & Sek, G., 21/08/2025, (E-pub ahead of print) In: Advanced Photonics Research.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Molecular Beam Epitaxy Grown GaAs-Based Type-II “W” -Lasers for O-Band Applications

    Marko, I., Duffy, D. A., Bentley, M., Marshall, A. R. J., Rihani, S., Berry, G., Robertson, M., Rawsthorne, J., Carrington, P. J. & Sweeney, S., 28/03/2025, In: Journal of Physics D: Applied Physics. 58, 18, 185103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. 2024
  5. Published

    Characterization of Below-Bandgap Absorption in Type II GaSb Quantum Dots in GaAs Solar Cells

    James, J. S., Fujita, H., Carrington, P. J., Marshall, A. R. J., Krier, S. & Krier, A., 19/07/2024, In: Physics. 6, 3, p. 990-998 9 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. 2023
  7. E-pub ahead of print

    Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications

    Yeap, G. H., Rybchenko, S., Itskevich, I., Haywood, S., Carrington, P. & Krier, A., 31/05/2023, (E-pub ahead of print) In: Defect and Diffusion Forum. 425, p. 3-8 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. 2022
  9. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. 2020
  12. E-pub ahead of print

    Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  14. Published

    Mid-infrared resonant cavity light emitting diodes operating at 4.5 μm

    Al-Saymari, F., Craig, A., Lu, Q., Marshall, A., Carrington, P. & Krier, A., 3/08/2020, In: Optics Express. 28, 16, p. 23338-23353 16 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. 2019
  16. Published

    Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

    Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 16/12/2019, In: Nanotechnology. 31, 10, 9 p., 105702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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