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Dr Peter Carrington

Senior Lecturer

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  1. Conference contribution/Paper
  2. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  3. Published

    InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

    Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V. & Krier, A., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 129-131 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  4. Published

    Mid-infrared diode lasers for free space optical communications

    Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, LJ., Wilson, RA. & Merlet, TJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  5. Conference paper
  6. Published

    Coupling in type II GaSb/GaAs quantum ring solar cells

    Montesdeoca Cardenes, D., Hodgson, P. D., De La Mata, M., Marshall, A. R. J., Molina, S. I., Carrington, P. J. & Krier, A., 14/05/2018.

    Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

  7. Journal article
  8. Published

    Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and Silicon wafers

    Altayar, A., Al-Saymari, F., Repiso Menendez, E., Hanks, L., Craig, A., Bentley, M., Delli, E., Carrington, P., Krier, A. & Marshall, A., 15/05/2022, In: Journal of Crystal Growth. 586, 6 p., 126627.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. E-pub ahead of print

    Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

    Delli, E., Hodgson, P., Bentley, M., Repiso Menendez, E., Craig, A., Lu, Q., Beanland, R., Marshall, A., Krier, A. & Carrington, P., 29/09/2020, (E-pub ahead of print) In: Applied Physics Letters. 117, 13, 6 p., 131103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Mid-infrared resonant cavity light emitting diodes operating at 4.5 μm

    Al-Saymari, F., Craig, A., Lu, Q., Marshall, A., Carrington, P. & Krier, A., 3/08/2020, In: Optics Express. 28, 16, p. 23338-23353 16 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

    Khan, A., Repiso Menendez, E., Herrera, M., Carrington, P., De La Mata, M., Pizarro, J., Krier, A. & Molina, S., 16/12/2019, In: Nanotechnology. 31, 10, 9 p., 105702.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

    Repiso Menendez, E., Broderick, C., de la Mata, M., Arkani, R., Lu, Q., Marshall, A., Molina, S., O'Reilly, E., Carrington, P. & Krier, A., 30/08/2019, In: Journal of Physics D: Applied Physics. 52, 10 p., 465102.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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