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13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

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13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. / Brown, Richard; Liu, Chen; Seager, George et al.
In: APL Photonics, Vol. 10, No. 1, 016102, 01.01.2025.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Brown, R, Liu, C, Seager, G, Alvarado, F, Wong, KM, Craig, AP, Beanland, R, Marshall, ARJ, Davies, JI & Li, Q 2025, '13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD', APL Photonics, vol. 10, no. 1, 016102. https://doi.org/10.1063/5.0231448

APA

Brown, R., Liu, C., Seager, G., Alvarado, F., Wong, K. M., Craig, A. P., Beanland, R., Marshall, A. R. J., Davies, J. I., & Li, Q. (2025). 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. APL Photonics, 10(1), Article 016102. https://doi.org/10.1063/5.0231448

Vancouver

Brown R, Liu C, Seager G, Alvarado F, Wong KM, Craig AP et al. 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. APL Photonics. 2025 Jan 1;10(1):016102. doi: 10.1063/5.0231448

Author

Brown, Richard ; Liu, Chen ; Seager, George et al. / 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. In: APL Photonics. 2025 ; Vol. 10, No. 1.

Bibtex

@article{830b30702cb84710b1725fa89acfd17c,
title = "13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD",
abstract = "In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.",
author = "Richard Brown and Chen Liu and George Seager and Francisco Alvarado and Wong, {Ka Ming} and Craig, {Adam P.} and Richard Beanland and Marshall, {Andrew R. J.} and Davies, {J. Iwan} and Qiang Li",
year = "2025",
month = jan,
day = "1",
doi = "10.1063/5.0231448",
language = "English",
volume = "10",
journal = "APL Photonics",
issn = "2378-0967",
publisher = "American Institute of Physics Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD

AU - Brown, Richard

AU - Liu, Chen

AU - Seager, George

AU - Alvarado, Francisco

AU - Wong, Ka Ming

AU - Craig, Adam P.

AU - Beanland, Richard

AU - Marshall, Andrew R. J.

AU - Davies, J. Iwan

AU - Li, Qiang

PY - 2025/1/1

Y1 - 2025/1/1

N2 - In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.

AB - In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.

U2 - 10.1063/5.0231448

DO - 10.1063/5.0231448

M3 - Journal article

VL - 10

JO - APL Photonics

JF - APL Photonics

SN - 2378-0967

IS - 1

M1 - 016102

ER -