TY - JOUR

T1 - A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE

AU - Anyebe, E.A.

AU - Kesaria, M.

AU - Sanchez, A.M.

AU - Zhuang, Q.

N1 - Funding details: Tertiary Education Trust Fund, TETFund Funding details: Engineering and Physical Sciences Research Council, EPSRC Funding text 1: The authors are thankful for the financial support received from EPSRC Lancaster IAA, Gas Sensing Solutions Ltd, UK, and Tertiary Education Trust Fund (TETFund), Nigeria.

PY - 2020/7/1

Y1 - 2020/7/1

N2 - In order to fully exploit the enormous potential of functional monolithic nanowire/graphene hybrid structures in high-performance flexible devices, a better understanding of the influence of the graphitic substrate (GS) on NWs growth is crucial. InAs nanowires (NWs) were simultaneously grown on Si and GS with identical growth temperature, In-flux and V/III flux ratio via an In-catalysed growth technique. It is demonstrated that the GS is a more favourable platform for the growth of dense InAs NWs under highly In-rich conditions (low V/III flux ratio), whereas silicon is a more suitable substrate under a highly As-rich condition (high V/III flux ratio). It is shown that the GS enables NWs growth at high In-flux which has enormous potential for the fabrication of cost-effective nanodevices. Transmission electron microscopy analysis of the NW/GS interface confirms the NWs are well aligned on the graphitic substrate. This study opens new possibilities for the choice of suitable substrate for the optimal growth of NWs under various conditions.

AB - In order to fully exploit the enormous potential of functional monolithic nanowire/graphene hybrid structures in high-performance flexible devices, a better understanding of the influence of the graphitic substrate (GS) on NWs growth is crucial. InAs nanowires (NWs) were simultaneously grown on Si and GS with identical growth temperature, In-flux and V/III flux ratio via an In-catalysed growth technique. It is demonstrated that the GS is a more favourable platform for the growth of dense InAs NWs under highly In-rich conditions (low V/III flux ratio), whereas silicon is a more suitable substrate under a highly As-rich condition (high V/III flux ratio). It is shown that the GS enables NWs growth at high In-flux which has enormous potential for the fabrication of cost-effective nanodevices. Transmission electron microscopy analysis of the NW/GS interface confirms the NWs are well aligned on the graphitic substrate. This study opens new possibilities for the choice of suitable substrate for the optimal growth of NWs under various conditions.

KW - Density

KW - Graphite

KW - InAs

KW - Nanowires

KW - Self-catalysed

KW - Catalysis

KW - Cost effectiveness

KW - High resolution transmission electron microscopy

KW - III-V semiconductors

KW - Silicon

KW - Comparative studies

KW - Flexible device

KW - Graphitic substrates

KW - Growth techniques

KW - Hybrid structure

KW - Rich conditions

KW - Self-catalysed growth

KW - Transmission electron

KW - Substrates

U2 - 10.1007/s00339-020-03609-z

DO - 10.1007/s00339-020-03609-z

M3 - Journal article

VL - 126

JO - Applied Physics A

JF - Applied Physics A

SN - 0947-8396

IS - 6

M1 - 427

ER -