Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 05/2006 |
|---|---|
| <mark>Journal</mark> | Nano Letters |
| Issue number | 5 |
| Volume | 6 |
| Number of pages | 5 |
| Pages (from-to) | 937-941 |
| Publication Status | Published |
| Early online date | 5/04/06 |
| <mark>Original language</mark> | English |
We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.