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A single electron transistor on an atomic force microscope probe

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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A single electron transistor on an atomic force microscope probe. / Brenning, Henrik T. A.; Kubatkin, Sergey E.; Erts, Donats et al.
In: Nano Letters, Vol. 6, No. 5, 05.2006, p. 937-941.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Brenning, HTA, Kubatkin, SE, Erts, D, Kafanov, S, Bauch, T & Delsing, P 2006, 'A single electron transistor on an atomic force microscope probe', Nano Letters, vol. 6, no. 5, pp. 937-941. https://doi.org/10.1021/nl052526t

APA

Brenning, H. T. A., Kubatkin, S. E., Erts, D., Kafanov, S., Bauch, T., & Delsing, P. (2006). A single electron transistor on an atomic force microscope probe. Nano Letters, 6(5), 937-941. https://doi.org/10.1021/nl052526t

Vancouver

Brenning HTA, Kubatkin SE, Erts D, Kafanov S, Bauch T, Delsing P. A single electron transistor on an atomic force microscope probe. Nano Letters. 2006 May;6(5):937-941. Epub 2006 Apr 5. doi: 10.1021/nl052526t

Author

Brenning, Henrik T. A. ; Kubatkin, Sergey E. ; Erts, Donats et al. / A single electron transistor on an atomic force microscope probe. In: Nano Letters. 2006 ; Vol. 6, No. 5. pp. 937-941.

Bibtex

@article{7d70995f91a342678305a747b7860758,
title = "A single electron transistor on an atomic force microscope probe",
abstract = "We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken. ",
author = "Brenning, {Henrik T. A.} and Kubatkin, {Sergey E.} and Donats Erts and Sergey Kafanov and Thilo Bauch and Per Delsing",
year = "2006",
month = may,
doi = "10.1021/nl052526t",
language = "English",
volume = "6",
pages = "937--941",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "5",

}

RIS

TY - JOUR

T1 - A single electron transistor on an atomic force microscope probe

AU - Brenning, Henrik T. A.

AU - Kubatkin, Sergey E.

AU - Erts, Donats

AU - Kafanov, Sergey

AU - Bauch, Thilo

AU - Delsing, Per

PY - 2006/5

Y1 - 2006/5

N2 - We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken. 

AB - We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken. 

U2 - 10.1021/nl052526t

DO - 10.1021/nl052526t

M3 - Journal article

C2 - 16683829

AN - SCOPUS:33744826567

VL - 6

SP - 937

EP - 941

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 5

ER -