Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Publication date | 1/12/1990 |
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Host publication | International Technical Digest on Electron Devices |
Publisher | IEEE |
Pages | 897-900 |
Number of pages | 4 |
<mark>Original language</mark> | English |
Event | 1990 International Electron Devices Meeting - San Francisco, CA, USA Duration: 9/12/1990 → 12/12/1990 |
Conference | 1990 International Electron Devices Meeting |
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City | San Francisco, CA, USA |
Period | 9/12/90 → 12/12/90 |
Name | Technical Digest - International Electron Devices Meeting |
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ISSN (Print) | 0163-1918 |
Conference | 1990 International Electron Devices Meeting |
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City | San Francisco, CA, USA |
Period | 9/12/90 → 12/12/90 |
A novel method for tuning an extended interaction oscillator cavity by separation of the cavity halves is described. This method has been devised by the European Space Agency in response to a foreseen requirement for a submillimeter power source where submillimeter manufacturing techniques would have to be used. The method, which is equally applicable to all frequency bands, is described, and full details of cold test results clearly demonstrating the feasibility of the device are given.