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A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning. / Perring, D.; Phillips, G.; Carter, R. G.

International Technical Digest on Electron Devices. IEEE, 1990. p. 897-900 (Technical Digest - International Electron Devices Meeting).

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Perring, D, Phillips, G & Carter, RG 1990, A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning. in International Technical Digest on Electron Devices. Technical Digest - International Electron Devices Meeting, IEEE, pp. 897-900, 1990 International Electron Devices Meeting, San Francisco, CA, USA, 9/12/90. https://doi.org/10.1109/IEDM.1990.237018

APA

Perring, D., Phillips, G., & Carter, R. G. (1990). A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning. In International Technical Digest on Electron Devices (pp. 897-900). (Technical Digest - International Electron Devices Meeting). IEEE. https://doi.org/10.1109/IEDM.1990.237018

Vancouver

Perring D, Phillips G, Carter RG. A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning. In International Technical Digest on Electron Devices. IEEE. 1990. p. 897-900. (Technical Digest - International Electron Devices Meeting). doi: 10.1109/IEDM.1990.237018

Author

Perring, D. ; Phillips, G. ; Carter, R. G. / A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning. International Technical Digest on Electron Devices. IEEE, 1990. pp. 897-900 (Technical Digest - International Electron Devices Meeting).

Bibtex

@inproceedings{59655299349e4aed840357a3a64b311e,
title = "A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning",
abstract = "A novel method for tuning an extended interaction oscillator cavity by separation of the cavity halves is described. This method has been devised by the European Space Agency in response to a foreseen requirement for a submillimeter power source where submillimeter manufacturing techniques would have to be used. The method, which is equally applicable to all frequency bands, is described, and full details of cold test results clearly demonstrating the feasibility of the device are given.",
author = "D. Perring and G. Phillips and Carter, {R. G.}",
year = "1990",
month = dec,
day = "1",
doi = "10.1109/IEDM.1990.237018",
language = "English",
series = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",
pages = "897--900",
booktitle = "International Technical Digest on Electron Devices",
note = "1990 International Electron Devices Meeting ; Conference date: 09-12-1990 Through 12-12-1990",

}

RIS

TY - GEN

T1 - A submillimetre wave extended interaction oscillator with novel broadband mechanical tuning

AU - Perring, D.

AU - Phillips, G.

AU - Carter, R. G.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - A novel method for tuning an extended interaction oscillator cavity by separation of the cavity halves is described. This method has been devised by the European Space Agency in response to a foreseen requirement for a submillimeter power source where submillimeter manufacturing techniques would have to be used. The method, which is equally applicable to all frequency bands, is described, and full details of cold test results clearly demonstrating the feasibility of the device are given.

AB - A novel method for tuning an extended interaction oscillator cavity by separation of the cavity halves is described. This method has been devised by the European Space Agency in response to a foreseen requirement for a submillimeter power source where submillimeter manufacturing techniques would have to be used. The method, which is equally applicable to all frequency bands, is described, and full details of cold test results clearly demonstrating the feasibility of the device are given.

U2 - 10.1109/IEDM.1990.237018

DO - 10.1109/IEDM.1990.237018

M3 - Conference contribution/Paper

AN - SCOPUS:0025576835

T3 - Technical Digest - International Electron Devices Meeting

SP - 897

EP - 900

BT - International Technical Digest on Electron Devices

PB - IEEE

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -