Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons

Physics

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https://doi.org/10.1063/1.1852071
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Keywords

semiconductor materials, semiconductor counters, semiconductor device models, numerical analysis, diffusion

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Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons. / Kororezov, Alexander G.; Wigmore, J. Keith; Owens, A. et al.
In: Journal of Applied Physics, Vol. 97, No. 7, 04.2005, p. 074502.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Bibtex

@article{401d0657ee234e3e8992945e028517a5,

title = "Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons",

abstract = "We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.",

keywords = "semiconductor materials, semiconductor counters, semiconductor device models, numerical analysis, diffusion",

author = "Kororezov, {Alexander G.} and Wigmore, {J. Keith} and A. Owens and {Den Hartog}, R. and A. Peacock",

year = "2005",

month = apr,

doi = "10.1063/1.1852071",

language = "English",

volume = "97",

pages = "074502",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "AMER INST PHYSICS",

number = "7",

}

RIS

TY - JOUR

T1 - Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons

AU - Kororezov, Alexander G.

AU - Wigmore, J. Keith

AU - Owens, A.

AU - Den Hartog, R.

AU - Peacock, A.

PY - 2005/4

Y1 - 2005/4

N2 - We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.

AB - We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.

KW - semiconductor materials

KW - semiconductor counters

KW - semiconductor device models

KW - numerical analysis

KW - diffusion

U2 - 10.1063/1.1852071

DO - 10.1063/1.1852071

M3 - Journal article

VL - 97

SP - 074502

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 1089-7550

IS - 7

ER -

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